发明名称 Electrooptic system array, charged-particle beam exposure apparatus using the same, and device manufacturing method
摘要 A charged-particle beam exposure apparatus includes a charged-particle beam source for emitting a charged-particle beam, an electrooptic system array which has a plurality of electron lenses and forms a plurality of intermediate images of the charged-particle beam source by the plurality of electron lenses, and a projection electrooptic system for projecting on a substrate the plurality of intermediate images formed by the electrooptic system array. The electrooptic system array includes at least two electrodes arranged along paths of a plurality of charged-particle beams, each of the at least two electrodes having a plurality of apertures on the paths of the plurality of charged-particle beams, and a shield electrode which is interposed between the at least two electrodes and has a plurality of shields corresponding to the respective paths of the plurality of charged-particle beams.
申请公布号 US2005253082(A1) 申请公布日期 2005.11.17
申请号 US20050168425 申请日期 2005.06.29
申请人 CANON KABUSHIKI KAISHA 发明人 ONO HARUHITO;MURAKI MASATO
分类号 G03F7/20;G01N23/00;G21G5/00;G21K5/10;H01J9/14;H01J9/18;H01J37/04;H01J37/12;H01J37/24;H01J37/30;H01J37/305;H01L21/027;H01L31/00;(IPC1-7):G21K7/00;G21K1/08 主分类号 G03F7/20
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