发明名称 Parallel multi-electron beam lithography for IC fabrication with precise X-Y translation
摘要 A maskless, direct write electron lithography apparatus for accurately and simultaneously writing plural sub-micron patterns on a silicon substrate employs plural parallel electron beams with precise X-Y mechanical translation of the substrate to provide low cost, high throughput integrated circuit (IC) fabrication. Plural compact micro electron gun assemblies arranged in a IxJ rectangular grid each simultaneously expose one IC pattern on the substrate, with each electron gun assembly including a KxL array of individually controlled electron guns emitting KxL electron beams. The regular, small spacing between electron beams in each array, i.e., approximately 1 mm or less, requires a correspondingly small X-Y translation of the substrate to write the entire wafer. Each electron gun array includes plural AC blanked cathodes and DC biased plates having plural aligned beam passing apertures. A computer controlled pattern generator synchronized with wafer X-Y translation controls the duration and timing of the cathode blanking signals.
申请公布号 US2005253093(A1) 申请公布日期 2005.11.17
申请号 US20040844201 申请日期 2004.05.12
申请人 GORSKI RICHARD M;ROZANSKY BORIS;CHEN HSING-YAO 发明人 GORSKI RICHARD M.;ROZANSKY BORIS;CHEN HSING-YAO
分类号 H01J37/04;H01J37/302;H01J37/317;(IPC1-7):H01J37/302 主分类号 H01J37/04
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