Decreasing the residue of a silicon dioxide layer after trench etching

摘要

A semiconductor device is formed using a BARC (bottom antireflective coating) that minimizes the formation of fences around the via holes. The BARC is formed from an organic antireflective layer over an inorganic antireflective layer. The organic antireflective layer also covers the internal surface of the via hole. Subsequent treatment with dilute aqueous or organic solvent leaves a thinned organic antireflective layer and a plug of organic material at the bottom of the via hole. The resulting semiconductor is free from the via hole fence formation that characterizes the conventional art technology.