发明名称 COMPOSITION FOR THIN-FILM CAPACITOR DEVICE, HIGH DIELECTRIC CONSTANT INSULATOR FILM, THIN-FILM CAPACITOR DEVICE, THIN-FILM MULTILAYER CAPACITOR, ELECTRONIC CIRCUIT AND ELECTRONIC DEVICE
摘要 A composition for thin-film capacitor devices containing a first bismuth lamellar compound and a second bismuth lamellar compound at an arbitrary mixture ratio is disclosed. The first bismuth lamellar compound displays a positive temperature characteristic, i.e. as the temperature increases the relative dielectric constant increases, at least in a part of a predetermined temperature range. The second bismuth lamellar compound displays a negative temperature characteristic, i.e. as the temperature increases the relative dielectric constant decreases, at least in a part of the predetermined temperature range. Specifically, a bismuth lamellar compounds represented by the composition formula CaxSr(1-x)Bi4Ti4 O15.
申请公布号 KR20050108366(A) 申请公布日期 2005.11.16
申请号 KR20057015838 申请日期 2005.08.25
申请人 TDK CORPORATION 发明人 SAKASHITA YUKIO;FUNAKUBO HIROSHI
分类号 H01G4/12;H01G4/20;H01G4/33;H01L21/316;H01L27/04;H01L27/108;(IPC1-7):H01G4/12 主分类号 H01G4/12
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