发明名称 |
COMPOSITION FOR THIN-FILM CAPACITOR DEVICE, HIGH DIELECTRIC CONSTANT INSULATOR FILM, THIN-FILM CAPACITOR DEVICE, THIN-FILM MULTILAYER CAPACITOR, ELECTRONIC CIRCUIT AND ELECTRONIC DEVICE |
摘要 |
A composition for thin-film capacitor devices containing a first bismuth lamellar compound and a second bismuth lamellar compound at an arbitrary mixture ratio is disclosed. The first bismuth lamellar compound displays a positive temperature characteristic, i.e. as the temperature increases the relative dielectric constant increases, at least in a part of a predetermined temperature range. The second bismuth lamellar compound displays a negative temperature characteristic, i.e. as the temperature increases the relative dielectric constant decreases, at least in a part of the predetermined temperature range. Specifically, a bismuth lamellar compounds represented by the composition formula CaxSr(1-x)Bi4Ti4 O15.
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申请公布号 |
KR20050108366(A) |
申请公布日期 |
2005.11.16 |
申请号 |
KR20057015838 |
申请日期 |
2005.08.25 |
申请人 |
TDK CORPORATION |
发明人 |
SAKASHITA YUKIO;FUNAKUBO HIROSHI |
分类号 |
H01G4/12;H01G4/20;H01G4/33;H01L21/316;H01L27/04;H01L27/108;(IPC1-7):H01G4/12 |
主分类号 |
H01G4/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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