发明名称 METAL ETCHING METHOD FOR AN INTERCONNECT STRUCTURE AND METAL INTERCONNECT STRUCTURE OBTAINED BY SUCH METHOD
摘要 A metal interconnects structure, comprises a substrate (11), a dielectric layer (12) lying above the substrate, a stop layer (13) for metal etching lying above the dielectric layer, a metal layer (15′) lying above the stop layer, said metal layer being patterned according to a desired pattern.
申请公布号 EP1595282(A1) 申请公布日期 2005.11.16
申请号 EP20040707606 申请日期 2004.02.03
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 BROEKAART, MARCEL;FORTUIN, ARNOUD
分类号 H01L21/311;H01L21/3213;H01L21/768;H01L23/532;(IPC1-7):H01L21/321 主分类号 H01L21/311
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