发明名称 |
METAL ETCHING METHOD FOR AN INTERCONNECT STRUCTURE AND METAL INTERCONNECT STRUCTURE OBTAINED BY SUCH METHOD |
摘要 |
A metal interconnects structure, comprises a substrate (11), a dielectric layer (12) lying above the substrate, a stop layer (13) for metal etching lying above the dielectric layer, a metal layer (15′) lying above the stop layer, said metal layer being patterned according to a desired pattern. |
申请公布号 |
EP1595282(A1) |
申请公布日期 |
2005.11.16 |
申请号 |
EP20040707606 |
申请日期 |
2004.02.03 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
BROEKAART, MARCEL;FORTUIN, ARNOUD |
分类号 |
H01L21/311;H01L21/3213;H01L21/768;H01L23/532;(IPC1-7):H01L21/321 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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