发明名称 |
ION BEAM INCIDENT ANGLE DETECTOR FOR ION IMPLANT SYSTEMS |
摘要 |
The present invention facilitates semiconductor device fabrication by monitoring and correcting angular errors during ion implantation procedures via an incident ion beam angle detector. Additionally, the present invention facilitates semiconductor device fabrication by calibrating a process disk with respect to an incident ion beam without measuring implantation results on wafers prior to an ion implantation process.
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申请公布号 |
KR20050108418(A) |
申请公布日期 |
2005.11.16 |
申请号 |
KR20057018548 |
申请日期 |
2004.03.31 |
申请人 |
AXCELIS TECHNOLOGIES, INC. |
发明人 |
REESE RONALD;GRAF MICHAEL;PARRILL THOMAS;FREER BRIAN |
分类号 |
G01N21/00;G01N23/00;G21K5/10;H01J37/244;H01J37/304;H01J37/317;H01L21/00;H01L21/265;H01L21/66;(IPC1-7):H01L21/265 |
主分类号 |
G01N21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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