| 发明名称 |
SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING THE SAME AND PROCESS FOR PRODUCING METAL COMPOUND THIN FILM |
| 摘要 |
High-dielectric gate insulating film (106) structured so as to comprise silicon substrate (102) and, sequentially superimposed thereon, a layer of high nitrogen concentration, a layer of low nitrogen concentration and a layer of high nitrogen concentration.
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| 申请公布号 |
KR20050108414(A) |
申请公布日期 |
2005.11.16 |
| 申请号 |
KR20057017889 |
申请日期 |
2005.09.23 |
| 申请人 |
ROHM CO., LTD.;RENESAS TECHNOLOGY CORP.;HORIBA, LTD.;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
IWAMOTO KUNIHIKO;NABATAME TOSHIHIDE;TOMINAGA KOJI;YASUDA TETSUJI |
| 分类号 |
H01L21/318;H01L21/28;H01L29/51;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/318 |
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