| 摘要 |
A copper alloy sputtering target characterized in that at least one element selected from among Al and Sn is contained in an amount of 0.01 to less than 0.5 wt.% while the total amount of Mn and Si is not greater than 0.25 wt.ppm; and a semiconductor element wiring material. In particular, a copper alloy sputtering target capable of forming a stable homogeneous seed layer, free from aggregation, with low sheet resistance in copper electroplating, which copper alloy sputtering target further excels in sputtering film formation characteristics; and a semiconductor element wiring formed with the use of the target.
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