| 摘要 |
A multifilm structure is provided for a pinned layer structure of a spin valve sensor for increasing the magnetoresistive coefficient (dr/R) of the sensor and/or decreasing a ferromagnetic coupling field (HF) between the pinned layer structure and the free layer of the sensor. The multifilm structure for the pinned layer in one or both AP layers of an AP pinned layer structure or a single pinned layer structure includes a nickel iron (NiFe) middle layer which is located between a cobalt (Co) first film and a cobalt (Co) second film. |
