发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor apparatus includes a semiconductor chip 61 including a power semiconductor device using a wide band gap semiconductor, base materials 62 and 63, first and second intermediate members 65 and 68a, a heat conducting member 66, a radiation fin 67, and an encapsulating material 68 for encapsulating the semiconductor chip 61, the first and second intermediate member 65 and 68a and the heat conducting member 66. The tips of the base materials 62 and 63 work respectively as external connection terminals 62a and 63a. The second intermediate member 68a is made of a material with lower heat conductivity than the first intermediate member 65, and a contact area with the semiconductor chip 61 is larger in the second intermediate member 68a than in the first intermediate member. <IMAGE>
申请公布号 EP1596434(A1) 申请公布日期 2005.11.16
申请号 EP20040772945 申请日期 2004.09.06
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KITABATAKE, MAKOTO;KUSUMOTO, OSAMU;UCHIDA, MASAO;TAKAHASHI, KUNIMASA;YAMASHITA, KENYA
分类号 H01L23/36;H01L23/367;H01L23/373;H01L23/433;H01L25/04 主分类号 H01L23/36
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