发明名称 |
Avalanche radiation detector |
摘要 |
<p>The avalanche radiation detector has a readout contact (A) on the front surface (VS) surrounded by a central avalanche region (AB). The central avalanche region consists of an n-doped region (DN) surrounded by an annular p-doped control electrode (R). The control electrode sets the electrical field strength in the central avalanche region. It sits on a continuous p-doped layer (DP) with a further p-doped ring (R') underneath. There is a thick n-doped semiconductor substrate (HK) under the central avalanche region. Radiation (h.f) enters the rear side (RS) of the detector through a p-doped electrode (RK).</p> |
申请公布号 |
EP1596439(A2) |
申请公布日期 |
2005.11.16 |
申请号 |
EP20050010035 |
申请日期 |
2005.05.09 |
申请人 |
MAX-PLANCK-GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFTEN E.V. |
发明人 |
LUTZ, GERHARD;RICHTER, RAINER H.;STRUEDER, LOTHAR |
分类号 |
H01L31/0328;H01L31/107;(IPC1-7):H01L31/107 |
主分类号 |
H01L31/0328 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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