| 摘要 |
An optical information recording medium includes a Si-, Al- or AlSi- based oxide/nitride dielectric film (3) comprising as an auxiliary ingredient at least one from Ni, Ti, Cr, Co, Ta, Cu and C that shows a film forming rate higher than that of SiON film and hence is adapted to mass production. The recording medium shows little change in the reflectivity after a long environment test. A first dielectric layer (2) made of ZnS-SiO2, an oxide/nitride dielectric layer (3) made of silicon-nickel oxide/nitride, a second dielectric layer (4) made of ZnS-SiO2, a first interface layer (5) made of GeN, a recording layer (6) made of Ge2Sb2Te5, a second interface layer (7) made of GeN, a third dielectric layer (8) made of ZnS-SiO2 and a reflection layer (9) are laid sequentially on a transparent substrate (1) in the above mentioned order. The oxide/nitride dielectric layer (3) is formed by reactive sputtering in a mixed gas atmosphere containing Ar gas, O2 gas and N2 gas. The refractive index of the oxide/nitride dielectric layer (3) is made lower than that of the first dielectric layer (2) that of the second dielectric layer (4) and the light absorption coefficient of the recording layer (6) is made lower in an amorphous state than in a crystalline state. <IMAGE> |
