| 发明名称 |
INTERCONNECT STRUCTURES INCORPORATING LOW-K DIELECTRIC BARRIER FILMS |
| 摘要 |
<p>The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween, where the ceramic diffusion barrier has a composition Si<SUB>v</SUB>N<SUB>w</SUB>C<SUB>x</SUB>O<SUB>y</SUB>H<SUB>z</SUB>, where 0.1<=v<=0.9, 0<=w<=0.5, 0.01<=x<=0.9, 0<=y<=0.7, 0.01<=z<=0.8 for v+w+x+y+z=1. The ceramic diffusion barrier acts as a diffusion barrier to metals, i.e., copper. The present invention also comprises a method for forming the inventive ceramic diffusion barrier including the steps depositing a polymeric preceramic having a composition Si<SUB>v</SUB>N<SUB>w</SUB>C<SUB>x</SUB>O<SUB>y</SUB>H<SUB>z</SUB>, where 0.1<v<0.8, 0<w<0.8, 0.05<x<0.8, 0<y<0.3, 0.05<z<0.8 for v+w+x+y+z=1 and then converting the polymeric preceramic layer into a ceramic diffusion barrier by thermal methods.</p> |
| 申请公布号 |
EP1595275(A2) |
申请公布日期 |
2005.11.16 |
| 申请号 |
EP20040705302 |
申请日期 |
2004.01.26 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COHEN, STEPHEN, A.;GATES, STEPHAN, M.;HEDRICK, JEFFREY, C.;HUANG, ELBERT, E.;PFEIFFER, DIRK |
| 分类号 |
H01L23/532;H01L;H01L21/00;H01L21/312;H01L21/4763;H01L21/768;H01L23/48;(IPC1-7):H01L21/00 |
主分类号 |
H01L23/532 |
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