| 摘要 |
A dielectric thin film (8) comprises a first bismuth lamellar compound layer (8a) which is expressed by the chemical formula: (Bi2O2)2+(Am-1B mO3m+1)2- or Bi2Am-1Bm O3m+3, wherein m represents a positive number, A represents at least one element selected among Na, K, Pb, Ba, Sr, Ca and Bi, and B represents at least one element selected among Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W. A second bismuth lamellar compound layer (8b) containing more bismuth than the first bismuth lamellar compound (8a) is formed between the first bismuth lamellar compound layer (8a) and a lower electrode (6).
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