| 发明名称 |
LOW VOLTAGE NMOS-BASED ELECTROSTATIC DISCHARGE CLAMP |
| 摘要 |
Systems and methods are described for a low-voltage electrostatic discharge clamp. A resistor pwell-tied transistor (201) may be used as a low-voltage ESD clamp, where the body (202) of the transistor (201) is coupled to the source (204) by a resistor (206), thereby reducing a DC leakage current and minimizing latch-ups in the transistor (201) while maintaining effective ESD performance.
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| 申请公布号 |
KR20050107753(A) |
申请公布日期 |
2005.11.15 |
| 申请号 |
KR20057014761 |
申请日期 |
2004.02.04 |
| 申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
BAIRD MICHAEL;IDA RICHARD T.;WHITFIELD JAMES D.;XU HONGZHONG;JOSHI SOPAN |
| 分类号 |
H01L;H01L21/00;H01L23/62;H01L27/02;H01L27/04;H01L29/76;(IPC1-7):H01L27/04 |
主分类号 |
H01L |
| 代理机构 |
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