发明名称 |
Multi-layer conductive memory device |
摘要 |
A multilayered conductive memory device capable of storing information individually or as part of an array of memory devices is provided. Boundary control issues at the interface between layers of the device due to the use of incompatible materials can be avoided by intentionally doping the conductive metal oxide layers that are comprised of substantially similar materials. Methods of manufacture are also provided herein.
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申请公布号 |
US6965137(B2) |
申请公布日期 |
2005.11.15 |
申请号 |
US20030605757 |
申请日期 |
2003.10.23 |
申请人 |
UNITY SEMICONDUCTOR CORPORATION |
发明人 |
KINNEY WAYNE;LONGCOR STEVEN W.;RINERSON DARRELL;HSIA STEVE KUO-REN |
分类号 |
G11C11/56;G11C13/00;H01L27/24;(IPC1-7):H01L31/062 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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