| 摘要 |
A circuit is enabled to capacitively drive a memory cell (erasing, programming, and reading) via a capacitance. The capacitance is additionally present and isolates the antenna from the driver circuit of the memory cell. Charge accumulates on the antenna in the case of a FIB attack. The capacitance prevents the charge from flowing away, so that the voltage thus generated acts on the memory cell, which thus experiences a corresponding alteration of its charge state, which is detected. The capacitance can be implemented and realized in any conventional manner, such as any arbitrary capacitor structure of the circuit.
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