Semi-insulating silicon carbide produced by Neutron transmutation doping

摘要

A method is disclosed for producing highly uniform semi-insulating characteristics in single crystal silicon carbide for semiconductor applications. The method includes irradiating a silicon carbide single crystal having net p-type doping and deep levels with neutrons until the concentration of ³¹P equals or exceeds the original net p-type doping while remaining equal to or less than the sum of the concentration of deep levels and the original net p-type doping.