发明名称 Methods of forming semiconductor logic circuitry, and semiconductor logic circuit constructions
摘要 The invention includes a method of forming semiconductor circuitry wherein a first semiconductor structure comprising a first monocrystalline semiconductor substrate is bonded to a second semiconductor structure comprising a second monocrystalline semiconductor substrate. The first semiconductor substrate has a semiconductive material projection extending therefrom, and the second semiconductor substrate has an electrically conductive interconnect extending therethrough. The interconnect electrically connects with the semiconductive material projection, and comprises a different dopant type than the semiconductor material projection. The invention also includes a method of bonding a first monocrystalline semiconductor substrate construction to a second monocrystalline semiconductor substrate construction, wherein the first construction is doped to a first dopant type, and the second construction is doped to a second dopant type different from the first dopant type. The invention further includes methods of forming semiconductor logic circuitry, and includes semiconductor constructions, such as, for example, semiconductor logic circuitry constructions.
申请公布号 US6964896(B2) 申请公布日期 2005.11.15
申请号 US20040931579 申请日期 2004.08.31
申请人 MICRON TECHNOLOGY, INC. 发明人 GONZALEZ FERNANDO
分类号 H01L21/285;H01L21/60;H01L21/768;H01L21/822;H01L23/48;H01L25/065;H01L27/06;(IPC1-7):H01L21/822;H01L29/788 主分类号 H01L21/285
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