| 摘要 |
A deposition method for supplying process gases into an evacuated processing vessel to deposit a metal tungsten film on the surface of an object to be processed. The processing gases include tungsten hexafluoride gas, hydrogen gas, and a reducing gas which has a richer reducing property than that of the hydrogen gas, the amount of the reducing gas being smaller than that of the hydrogen gas. Thus, it is possible to form a metal tungsten film without increasing stress in the film so much even in a low temperature region of about 400° C. and without decreasing a deposition rate so much.
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