| 摘要 |
Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing (305) to lower deposition temperatures (315) for Ge-containing layers, Si or Ge compounds are provided (310) to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers (110) result. Retrograded relaxed SiGe (115) is also provided between a relaxed, high Ge-content seed layer (110) and an overlying strained layer (120).
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