| 摘要 |
A method for forming a metal nitride film on the surface of an article to be treated in a treating chamber capable of being evacuated, which comprises a step of continuously feeding an inert gas into the treating chamber having a high film forming temperature and a step of intermittently feeding a metal source gas into the treating chamber during the continuous feed of the inert gas, wherein in the step of intermittently feeding the metal source gas, a nitrogen- containing reducing gas is fed into the treating chamber together with the feed of the metal source gas in the period of the feed of the metal source gas, or, in the step of intermittently feeding the metal source gas, a nitrogen-containing reducing gas is fed into the treating chamber in the stop period for the feed of the metal source gas, for a time shorter than said stop period, and wherein the thickness of the metal nitride film formed during one time feed of the metal source gas is 60 nm or less. The above method allows the deposition of a metal nitride film exhibiting a reduced chlorine content and a reduced resistivity and being suppressed with respect to the occurrence of cracks, even when the film is formed at a relatively high temperature.
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