发明名称 |
Semiconductor device using low-K material as interlayer insulating film and its manufacture method |
摘要 |
A semiconductor element is formed over a surface of a semiconductor substrate. A first insulating film is formed over the surface of the semiconductor substrate, the first insulating film covering the semiconductor element. A second insulating film is formed over the first insulating film, the second insulating film having a dielectric constant lower than that of the first insulating film. A first wiring pattern is formed over the second insulating film. A conductive connection member buried in the second and first insulating films electrically interconnects the first wiring pattern and semiconductor element. |
申请公布号 |
US2005250309(A1) |
申请公布日期 |
2005.11.10 |
申请号 |
US20050179550 |
申请日期 |
2005.07.13 |
申请人 |
FUJITSU LIMITED |
发明人 |
FUKUYAMA SHUN-ICHI;OWADA TAMOTSU;INOUE HIROKO;SUGIMOTO KEN |
分类号 |
H01L21/768;H01L23/31;H01L23/522;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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