Trench capacitor manufacture, for memory cells, includes etching trench, preparing sealing layers on its walls and conducting selective epitaxial deposition process

摘要

The trench is etched in a surface (1) of the semiconductor substrate (2) producing a wall (31). Layers (9, 26, 27) are prepared on the wall. The uppermost layer (9) is a sealing material. A selective epitaxial process is carried out to form a single crystal semiconductor layer (11, 23, 24, 25) on the surface (1). No semiconductor material grows on the sealing material. A partial trench (30) is etched in a surface (16) of the layer (11, 23, 24, 25). This stage lays bare at least part of the sealing layer (9). The exposed part of the layer is removed from the sealing material. An independent claim is included for the corresponding memory cell with storage capacitor.