发明名称 |
COUNTERACTING OVERTUNNELING IN NONVOLATILE MEMORY CELLS |
摘要 |
<p>Methods and apparatuses prevent overtunneling in nonvolatile floating gate memory (NVM) cells. An individual cell includes a circuit with a transistor that has a floating gate that stores charge, and a capacitor structure for extracting charge from the gate, such as by tunneling. A counteracting circuit prevents extracting charge from the floating gate beyond a threshold, therefore preventing overtunneling or correcting for it. In one embodiment, the counteracting circuit supplies electrons to the floating gate, to compensate for tunneling beyond a point. In another embodiment, the counteracting circuit includes a switch, and a sensor to trigger the switch when the appropriate threshold is reached. The switch may be arranged in any number of suitable ways, such as to prevent a high voltage from being applied to the capacitor structure, or to prevent a power supply from being applied to a terminal of the transistor or to a well of the transistor.</p> |
申请公布号 |
WO2005106893(A1) |
申请公布日期 |
2005.11.10 |
申请号 |
WO2005US13644 |
申请日期 |
2005.04.20 |
申请人 |
US;US;US;US;US;US |
发明人 |
DIORIO, CHRISTOPHE, J.;LINDHORST, CHAD, A.;SRINIVAS, SHAILENDRA;PESAVENTO, ALBERTO;GILLILAND, TROY |
分类号 |
G11C16/34;(IPC1-7):G11C16/34 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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