| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electron beam exposure device for irradiating and scanning over a mask having a mask pattern according to an exposure pattern with an electron beam generated by an electron beam source using a deflection means, for performing the exposure of the exposure pattern to the electron beam passing through the mask, and for performing high precision correction of deflection distortion in this deflection means; and capable of carrying out the work required in this correction in a short time. <P>SOLUTION: The electron beam exposure device 1 comprises: support means 43, 44 for positioning a position detection mark 46 to produce secondary electrons by the irradiation with the electron beam 15 at the known position in the deflection region of the deflection means 21 and 22; a deflection command amount acquiring unit 72 for acquiring the deflection command amount when the secondary electrons produced by this position detection mark 46 are detected; and a correction unit 74 which, in order to deflect the electron beam 15 to the known position of the position detection mark, corrects a predetermined deflection command amount corresponding to that position to obtain the acquired deflection command amount. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
