| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing cloth for polishing a thin film by which the thin film is polished at appropriate polishing speed without using a polishing agent, a variation of polishing speed is suppressed within a plane to be polished, and such wafers that are uniformly polished on the entire surface are continuously manufactured. <P>SOLUTION: The polishing cloth 1 for polishing a thin film is manufactured, which contains such substances as an organic acid, an amino acid, amines, an inorganic acid, a sulphur compound, etc. having a chelate effect and an etching effect to metals included in the thin film. The cloth 1 is stuck to the polishing plate 4 of a CMP device 100, and the polishing surface 5a of an object 5 to be polished is polished. Thus, not a polishing agent but a water containing no polishing agent or a hydrogen peroxide solution is supplied through a nozzle 7, and a thin film formed on the polishing surface 5a of the object 5 is polished at appropriate polishing speed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
