摘要 |
PROBLEM TO BE SOLVED: To enable decoding of an array of a conductive structure where the pitch is narrow. SOLUTION: There is provided a multiplexing/demultiplexing architecture 804 of a field effect transistor (FET) and a method of manufacturing the same. One of the multiplexing/demultiplexing architecture 804 of the FET enables decoding (multiplexing/demultiplexing) of an array 402 or an array 1502 of conductive structure 404 or 1504, where the pitch is narrow. Another architecture enables efficient decoding of the array 402 and 1502 of the conductive structure, where the pitch is narrower or various types of conductive structure in another appearance. Further, the processes of forming the multiplexing/demultiplexing architecture 804 of the FET are disclosed, and in these processes, a processing step which does not depend on positioning is used. In one process among these processes, imprinting step with low accuracy and further processing step which does not depend on positioning are used. COPYRIGHT: (C)2006,JPO&NCIPI
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