| 摘要 |
A solid-state image sensing device that is free of kTC noise, can eliminate black smear and dark current, has a larger numerical aperture, and can eliminate the problem of insufficient area of the light-receiving portion. Photodiode PD is formed as the light-receiving portion in the formation region of first semiconductor region 15 . Light is received by semiconductor layer 14 in this region, and the generated signal charge is accumulated. Semiconductor layer 12, 14 , gate electrode for pixel selection 13 a, first semiconductor region 15 , second semiconductor region 16 , third semiconductor region 17 , etc., form transistor Tr<SUB>1 </SUB>for pixel selection. The threshold of junction transistor JT<SUB>1</SUB>, composed of semiconductor substrate 10 , semiconductor layer 14 , and second semiconductor region 16 , etc., is modulated by means of the signal charge accumulated in semiconductor layer 14 in the light-receiving portion. When transistor Tr<SUB>1 </SUB>for pixel selection is ON, a voltage modulated according to the signal charge is output.
|
