| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for forming an organic thin film for which highly precise patterning is needed considering expansion/contraction of a mask and a substrate. SOLUTION: The temperature of objects 33<SB>1</SB>-33<SB>4</SB>for film formation arranged in a temperature adjustment chamber 16 is measured, and compared with the temperature of a mask 51 arranged in a vapor deposition chamber 15. After the objects are heated/cooled to be matched with the temperature of the mask 51, the works are taken out of the temperature adjustment chamber 16, and arranged close to the mask 51, and organic compound vapor is emitted from a vapor deposition source 52 to form a patterned organic thin film on a surface of an object 32a for film formation. Since expansion/contraction of the mask 51 caused by the differential temperature does not occur, the organic thin film of the correct pattern can be formed. COPYRIGHT: (C)2006,JPO&NCIPI
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