METHOD FOR FORMING SINGLE CRYSTAL THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a large areal metal-nanoparticle or -nanowire in a short time. SOLUTION: The method comprises the process of forming a compound thin film 2 on the main surface of a single crystal substrate 1 and the process of treating by heat the above single crystal substrate 1 under a hydrogen atmosphere and of thereby reducing the above compound thin film 2. A large areal metal-nanoparticle or -nanowire, which has a minute structure with a size of several to several tens of nanometers, can be easily formed for a short time, because a reducing reaction by a heat treatment of the compound thin film 2 under a hydrogen atmosphere is carried out on the surface of the single crystal thin film 4. COPYRIGHT: (C)2006,JPO&NCIPI