发明名称 Mask device for photolithography and application thereof
摘要 A mask device includes a single layer of reflection mask on a transparent substrate to simply the growth fabricating of the reflection mask, therefore, using single layer of reflection mask can easier control the defect. Furthermore, a pattern-transferring method for a photolithography process is to utilize the incident exposing radiation with a grazing incident angle to illuminate the photolithography mask, such that the pattern can be transferred onto the wafer clearly, and the resolution of the photolithography would be improved.
申请公布号 US2005250019(A1) 申请公布日期 2005.11.10
申请号 US20040837638 申请日期 2004.05.04
申请人 UNITED MICROELECTRONICS CORP. 发明人 LIN BENJAMIN S.
分类号 G03C5/00;G03F1/14;G03F9/00;G21K1/06;G21K5/00;(IPC1-7):G03C5/00 主分类号 G03C5/00
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