发明名称 |
Dynamic random access memory cell leakage current detector |
摘要 |
A circuit operable to measure leakage current in a Dynamic Random Access Memory (DRAM) is provided comprising a plurality of DRAM bit cell access transistors coupled to a common bit line, a common word line, and a common storage node, wherein said access transistors may be biased to simulate a corresponding plurality of inactive bit cells of a DRAM; and a current mirror in communication with the common storage node operable to mirror a total leakage current from said plurality of bit cell access transistors when the access transistors are biased to simulate the inactive bit cells.
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申请公布号 |
US2005248976(A1) |
申请公布日期 |
2005.11.10 |
申请号 |
US20040840098 |
申请日期 |
2004.05.06 |
申请人 |
HUANG CHIEN-HUA;CHOU CHUNG-CHENG |
发明人 |
HUANG CHIEN-HUA;CHOU CHUNG-CHENG |
分类号 |
G11C7/12;G11C11/24;G11C11/4094;G11C29/50;(IPC1-7):G11C11/24 |
主分类号 |
G11C7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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