| 摘要 |
FIELD: production of various semiconductor components, in particular, manufacture of ceramics with metallized surface. ^ SUBSTANCE: method involves providing vacuum deposition of buffer layer of low-melting point metal on ceramic surface; applying basic outer layer of coating metal having higher melting point than buffer layer; placing article with double-layer metal coating in vacuum chamber and exposing to photon annealing with the result that metal coating is heated to melting temperature of basic outer layer; cooling metallized ceramics in gaseous medium without oxygen access, with argon having room temperature being used as gaseous medium. Buffer layer preferably has thickness of 0.1-0.2 micron, and total thickness of buffer and basic outer layer of metal coating does not exceed 0.1 the thickness of ceramic base. ^ EFFECT: elimination of deformation which might occur due to different temperature expansion extent of metal and ceramics, and improved quality of end product. ^ 3 cl, 1 ex |
