| 摘要 |
FIELD: production of various semiconductor components, in particular, manufacture of ceramics with metallized surface. ^ SUBSTANCE: method involves providing vacuum deposition of metal layer onto surface of ceramic component, with thickness of metal layer not exceeding 0.01 the thickness of ceramic component; exposing resultant coating to photon annealing with focused non-coherent radiation emitted from xenon lamp at specific radiation energy levels of 1-4 J/(cm2.s) and radiation time tau, with radiation time being determined from formula: where k is empirical coefficient taking into account energy consumed for heating of ceramic base; Q is specific metal melting heat, J/g; P is metal density, g/cm3; h is thickness of coating layer, cm; q is specific radiation energy, J/(cm2.s); kr is coefficient of reflection of heat flux from coating surface; after termination of photon annealing procedure, cooling ceramic member in gaseous medium for 3-15 min without oxygen access. ^ EFFECT: improved quality of metallized ceramic products and reduced labor intensity for manufacture of such products. ^ 2 cl, 1 ex |
