发明名称 MULTILAYERED SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To operate individual semiconductor elements stably by improving the heat dissipation efficiency of each semiconductor element by using a simple and low-cost multilayered structure in a multilayered semiconductor device. <P>SOLUTION: The multilayered semiconductor device comprises a first wiring board which has a first semiconductor element mounted thereon and is electrically connected to the first semiconductor element, a second wiring board which has a second semiconductor element mounted thereon and is electrically connected to the second semiconductor element and is arranged above the first wiring board, through hole formed in such a region as not to interfere with the electric bonding of the first wiring board with the first semiconductor element, electrode pads formed on the surface of the first wiring board opposite from the one whereon the first semiconductor element is mounted, conductive member for electrically connecting electrode pads formed on the surface of the second wiring board opposite from the one whereon the second semiconductor element is mounted, and heat conduction material which is interposed between the first and second wiring boards and is in contact with the first semiconductor element and the second wiring board via the through hole. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005317792(A) 申请公布日期 2005.11.10
申请号 JP20040134382 申请日期 2004.04.28
申请人 FUJITSU LTD 发明人 KUMAGAI KINICHI;NISHIMURA TAKAO;TAKASHIMA AKIRA
分类号 H01L23/36;H01L25/10;H01L25/11;H01L25/18;(IPC1-7):H01L23/36 主分类号 H01L23/36
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