| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce warpage in a base plate occurring when manufacturing a semiconductor device having the base plate. <P>SOLUTION: Semiconductor constructs 2 called CSP are arranged at a plurality of prescribed places on the base plate 1 in a size corresponding to a plurality of semiconductor devices, sheets 14a, 14b for forming a lattice-like insulating layer containing a tacky resin are arranged on the base plate 1 among the semiconductor constructs 2, and a lattice-like hard sheet 15 made of the same material as the base plate 1 is arranged on the sheets. And heated press is vertically performed, an insulating layer is formed on the base plate 1 among the semiconductor constructs 2, and the hard sheet 15 is buried into the upper surface of the insulating layer. In this case, the hard sheet 15 made of the same material as the base plate 1 is arranged on the sheets 14a, 14b for forming the insulating layer, thus reducing the warpage in the base plate 1. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
