| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate washing device with which foreign matters stuck to the rear face of a substrate can sufficiently be removed without damaging the substrate. <P>SOLUTION: A plasma processor 1 as the washing device is provided with a chamber 10, a susceptor 11 which is arranged in the chamber 10 and on which the wafer W is placed, an electrode plate 20 which is installed in the susceptor 11 and to which high voltage is applied, a rough reduction line which exhausts inside of the chamber 10, a pusher pin 30 causing a space S between the susceptor 11 and the wafer W, a heat transfer gas supply hole 27 supplying N<SB>2</SB>gas to the space S, and a shower head 33 introducing raw gas and the like into the chamber 10. When the space S is caused, high voltages with different polarities are alternately applied to the electrode plate 20. N<SB>2</SB>gas is jetted to the space S toward the rear face of the wafer W. When inside of the chamber 10 is exhausted and inside of the chamber is decompressed, N<SB>2</SB>gas is introduced into the chamber 10. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
