发明名称 FLASH MEMORY SYSTEM AND CONTROL METHOD OF FLASH MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To prevent lengthening of access time even in occurrence of rewrite in a flash memory. <P>SOLUTION: The flash memory system 1 including the flash memory 2 comprises an FRAM 4 of overwritable nonvolatile memory, and management information used in management for access to the flash memory 2 is stored in the FRAM 4. An address conversion table for converting a logic address given from a host system 20 and a physical address on the flash memory 2 is stored in the FRAM 4, whereby rewrite of a part of the address conversion table on the FRAM 4 is just needed, and the access time to the flash memory 2 is never lengthened. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005316793(A) 申请公布日期 2005.11.10
申请号 JP20040135045 申请日期 2004.04.30
申请人 TDK CORP 发明人 HANABUSA SHUNICHI
分类号 G06F12/16;G06F12/00;G06F12/02 主分类号 G06F12/16
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