SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

A semiconductor light emitting element is provided, by which a high light reflection rate is obtained by using a high reflection metal layer formed on one electrode side and migration of atoms from the high reflection metal layer can be prevented. Semiconductor layers having opposite conductivity types are formed, having an active layer in between. On one of the semiconductor layers, an ohmic contact layer for making a contact resistance low with a thin film, a transparent conductive layer, which is transparent and having conductivity, and a high reflection metal layer for reflecting light generated in the active layer are successively stacked. Since the transparent conductive layer functions also as a barrier layer and transmits light, a high light extracting efficiency can be obtained by the reflection on the high reflection metal layer.