| 摘要 |
PROBLEM TO BE SOLVED: To provide a method, by which an etching-work for metallic magnetic material film can be performed in a high selectablity to a mask without using gas having high toxicity. SOLUTION: Plasma is generated from reaction gas containing hydrocarbon compound gas, gas of compound having oxygen atom and gas of compound having nitrogen atom by using high frequency, and the etching of the metallic magnetic material film is performed with this plasma. In this reaction, a little amount of argon gas can be added, and in this way, the etching speed can be improved, and for further improving the etching speed, hydrogen fluoride carbide can be used. COPYRIGHT: (C)2006,JPO&NCIPI
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