| 发明名称 |
Memory device using multi-layer with a graded resistance change |
| 摘要 |
A memory device using a multi-layer with a graded resistance change is provided. The memory device includes: a lower electrode; a data storage layer being located on the lower electrode and having the graded resistance change; and an upper electrode being located on the data storage layer. |
| 申请公布号 |
US2005247921(A1) |
申请公布日期 |
2005.11.10 |
| 申请号 |
US20050116332 |
申请日期 |
2005.04.28 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE MYOUNG-JAE;YOO IN-KYEONG;SEO SUN-AE;SUH DONG-SEOK;SEO DAVID;JEON SANG-HUN |
| 分类号 |
H01L27/10;H01L27/115;H01L27/24;H01L29/02;H01L45/00;(IPC1-7):H01L29/02 |
主分类号 |
H01L27/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
