PATTERN EXPOSURE METHOD AND PATTERN EXPOSURE APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a pattern exposure method and a pattern exposure apparatus in which the throughput is improved with an inexpensive apparatus and without a low running cost.

SOLUTION: Output faces 5 of a plurality of laser beams 1a emitted from a plurality of semiconductor lasers respectively are arranged in two directions. One of the directions is the same direction as the scanning direction of a polygon mirror 27 while the other is a direction crossing the scanning direction of the polygon mirror 27. In this event, the array pitch of the output faces 15 arranged in the direction crossing the scanning direction of the polygon mirror 27 is made equal to resolution of an exposure pattern. In this event, the wavelength of each laser may be made not longer than 410 nm.

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