| 摘要 |
PROBLEM TO BE SOLVED: To provide a seed crystal which is capable of manufacturing, with good reproducibility, a good qualitative, large caliber ingot which has few void defects, has few minute polycrystalline particles, and has few crystal defects occurring due to these reasons, and to provide a manufacturing method thereof and a manufacturing method of an SiC single crystal ingot. SOLUTION: The seed crystal for use in a silicon carbide single crystal growth, having one side surface of a plane surface and the other side surface of not necessarily a plane surface, and besides the manufacturing method thereof, and furthermore the method for growing an SiC single crystal using this seed crystal, are each disclosed. COPYRIGHT: (C)2006,JPO&NCIPI
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