发明名称 MANUFACTURING PROCESS OF SEED CRYSTAL PLATE
摘要 PROBLEM TO BE SOLVED: To solve the problem that when a seed crystal plate is made from an artificial crystal having a linear defect and an artificial crystal is grown again from the seed crystal plate by hydrothermal synthesis, a linear defect appears in the form inherited from the linear defect in the seed crystal plate in the crystal grown on the surface of the seed crystal plate having the linear defect and the linear defect in the seed crystal plate increases gradually, as it goes through generations of the growth. SOLUTION: The manufacturing process of a seed crystal plate comprises a step to provide a cover film on the area where more than one linear defects are exposed on the surface of the first seed crystal plate to cover the linear defects, a step to form an artificial crystal body for obtaining a seed crystal plate by growing the artificial crystal on the surface of the first seed crystal plate containing the covering film by hydrothermal synthesis and a step to form the more than one second seed crystal plates from the newly grown growth region in the same size as that of the first seed crystal plate by cutting and polishing process, avoiding the area of no grown crystal on the surface of the covering film. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005314145(A) 申请公布日期 2005.11.10
申请号 JP20040132105 申请日期 2004.04.27
申请人 KYOCERA KINSEKI CORP 发明人 OBA KENJI
分类号 C30B29/18;C30B7/10;(IPC1-7):C30B29/18 主分类号 C30B29/18
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