发明名称 PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON
摘要 PROBLEM TO BE SOLVED: To provide a process for inexpensively producing polycrystalline silicon in a high utilization efficiency of a raw material gas. SOLUTION: The process for producing the polycrystalline silicon is one for producing the polycrystalline silicon by the thermal decomposition and hydrogen reduction of a silane gas, wherein a plurality of thermal reactors are connected to each other in series, an unreacted silane gas-containing waste gas discharged from a preceding reactor is fed into the subsequent step reactor and reacted to sequentially utilize an unreacted silane gas to deposit the polycrystalline silicon, and desirably, the reaction is carried out by feeding a silane gas from a raw material feed step into the second or latter reactors to replenish them with the silane gas in an amount equal to that consumed. An apparatus for producing the same is also provided. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005314191(A) 申请公布日期 2005.11.10
申请号 JP20040136567 申请日期 2004.04.30
申请人 MITSUBISHI MATERIALS POLYCRYSTALLINE SILICON CORP 发明人 NAKANO MAMORU;ISHII TOSHIYUKI;MORI HISANORI;SAKAGUCHI MASAAKI;NAWATA MASAKI
分类号 C01B33/029;(IPC1-7):C01B33/029 主分类号 C01B33/029
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