| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method capable of stably forming a shoulder and efficiently pulling a silicon single crystal by adjusting a furnace internal pressure according to the processes of pulling. SOLUTION: The method for producing a silicon single crystal in an Ar gas atmosphere by the CZ process comprises the steps of melting a silicon stock at a furnace internal pressure of 13.3-40.0 kPa (100-300 Torr), acclimatizing a seed crystal to the melt, performing seed-narrowing, forming a shoulder at a furnace internal pressure of 0.67-6.7 kPa (5-50 Torr), and subsequently pulling a straight body part at a furnace internal pressure of 13.3-40.0 kPa (100-300 Torr). Further, the above melting of a silicon stock may include the melting accompanying meltback. COPYRIGHT: (C)2006,JPO&NCIPI
|
