| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a chip size package type semiconductor device and its manufacturing method. SOLUTION: A semiconductor substrate 10 formed with a pad electrode 11 is prepared. On the surface of the semiconductor substrate 10, a first protection layer 20 formed of epoxy resin is formed. Thereafter, a via hole 12 is formed which is extended from the rear surface of the semiconductor substrate 10 to the pad electrode 11. Next, an interconnection layer 13 is formed which is electrically connected to the pad electrode 11 through the via hole 12 and is extended from the via hole 12 over to the rear surface of the semiconductor substrate 10. Then, a second protection layer 14 and a conduction terminal 15 are formed, and then the semiconductor substrate 10 is divided into individual semiconductor chips 10A by dicing. COPYRIGHT: (C)2006,JPO&NCIPI
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