发明名称 |
Methods of forming electrical connections for semiconductor constructions |
摘要 |
The invention includes methods for forming electrical connections associated with semiconductor constructions. A semiconductor substrate is provided which has a conductive line thereover, and which has at least two diffusion regions adjacent the conductive line. A patterned etch stop is formed over the diffusion regions. The patterned etch stop has a pair of openings extending through it, with the openings being along a row substantially parallel to an axis of the line. An insulative material is formed over the etch stop. The insulative material is exposed to an etch to form a trench within the insulative material, and to extend the openings from the etch stop to the diffusion regions. At least a portion of the trench is directly over the openings and extends along the axis of the line. An electrically conductive material is formed within the openings and within the trench.
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申请公布号 |
US2005250315(A1) |
申请公布日期 |
2005.11.10 |
申请号 |
US20040841708 |
申请日期 |
2004.05.06 |
申请人 |
TRAN LUAN C;FISHBURN FRED D |
发明人 |
TRAN LUAN C.;FISHBURN FRED D. |
分类号 |
H01L21/768;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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