| 摘要 |
A method of fabricating a semiconductor device includes forming a film stack having a Ti film and a metal film containing Ni sequentially deposited on a surface of a substrate of a GaN based semiconductor, SiC, or sapphire, patterning the film stack to expose a portion of the surface of the etching substance, and dry etching an exposed portion of the surface of the etching substance. It is thus possible to enhance the adhesion between a dry etching mask and the surface of the etching substance. Peeling and cracking are suppressed and the highly accurate etching can be performed.
|
